Abstract
Photoluminescence measurements have been performed at low temperature in As/GaAs quantum wells with different well widths, L, and indium concentrations x. The dependence of the experimental linewidth of the heavy-hole–free-exciton recombination lines on L and x has been compared with existing models of interface and alloy disorder. It has been demonstrated that interface disorder has a crucial role at low L and high x. The estimated values of the interface-roughness size agree well with those found by different techniques.
- Received 30 December 1994
DOI:https://doi.org/10.1103/PhysRevB.52.2784
©1995 American Physical Society