Many-electron effects on ballistic transport

Yongjiang Wang, Jian Wang, Hong Guo, and Eugene Zaremba
Phys. Rev. B 52, 2738 – Published 15 July 1995
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Abstract

A Thomas-Fermi-Dirac–von Weizsäcker density-functional formalism is used to study the effects of many-electron Coulomb interactions on quantum transport through two-dimensional semiconductor nanostructures. The electron density is obtained by direct minimization of the total energy functional, and an effective potential for the electrons is determined as a functional of the density self-consistently. Transmission coefficient and conductance are computed with the effective potential included. The electron density distribution as well as the effective potential are strongly affected by the average electron density and the distance between the two-dimensional electron gas and the positive background charge. The transmission property of a stadium-shaped open quantum-dot system is investigated by varying these system parameters. The electron ballistic transport problem is solved in the presence of the many-electron effective potential and results are compared to that of the single-electron approximation. Some important differences are observed.

  • Received 24 February 1995

DOI:https://doi.org/10.1103/PhysRevB.52.2738

©1995 American Physical Society

Authors & Affiliations

Yongjiang Wang

  • Centre for the Physics of Materials, Department of Physics, McGill University, Montréal, Québec, Canada H3A 2T8

Jian Wang

  • Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong

Hong Guo

  • Centre for the Physics of Materials, Department of Physics, McGill University, Montréal, Québec, Canada H3A 2T8

Eugene Zaremba

  • Department of Physics, Queen’s University, Kingston, Ontario, Canada K7L 3N6

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Vol. 52, Iss. 4 — 15 July 1995

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