Theory of electron two-band self-trapping in atomic soft configurations: Hybridization of states, formation of negative-U centers, and anharmonic atomic dynamics

M. I. Klinger and S. N. Taraskin
Phys. Rev. B 52, 2557 – Published 15 July 1995
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Abstract

A consistent theory of two-band self-trapping of electrons (holes) in semiconductors is presented, in which negative-U centers in the interband (mobility) gap are formed as singlet electron (hole) pairs self-trapped in atomic soft configurations. Both the configuration softness and hybridization of the bare single-electron state with extended band states are essential for formation of the self-trapped states and negative-U centers. The hybridization significantly changes appropriate soft configurations, introducing additional anharmonic features in the related atomic dynamics. Examples are mobility-gap states and negative-U centers and the related atomic dynamics in glassy semiconductors, the properties of which are discussed.

  • Received 3 April 1995

DOI:https://doi.org/10.1103/PhysRevB.52.2557

©1995 American Physical Society

Authors & Affiliations

M. I. Klinger

  • Department of Physical Chemistry, University of Cambridge, Cambridge CB2 1EW, United Kingdom
  • Department of Physics, Bar Ilan University, 52900 Ramat Gan, Israel

S. N. Taraskin

  • Department of Physical Chemistry, University of Cambridge, Cambridge CB 1EW, United Kingdom
  • Department of Theoretical Physics, Moscow Engineering Physics Institute, 115409 Moscow, Russia

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Issue

Vol. 52, Iss. 4 — 15 July 1995

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