Infrared absorption due to two-dimensional-electron-gas collective excitation in GaAs/AlxGa1xAs multiple-quantum-well structures

Qin-Sheng Zhu, Xiao-Bing Wang, Quan-Gang Du, Zhan-Tian Zhong, and Yi-Rong Xing
Phys. Rev. B 52, 1848 – Published 15 July 1995
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Abstract

Infrared absorption due to a collective excitation of a two-dimensional electronic gas was observed in GaAs/AlxGa1xAs multiple-quantum wells when the incident light is polarized parallel to the quantum-well plane. We attribute this phenomenon to a plasma oscillation in the quantum wells. The measured wavelength of the absorption peak due to the plasma oscillation agrees with our theoretical analysis. In addition, in this study the plasma-phonon coupling effect is also fitted to the experimental result. We show that the absorption is not related to the intersubband transitions but to the intrasubband transition, which originates from a plasma oscillation.

  • Received 3 February 1995

DOI:https://doi.org/10.1103/PhysRevB.52.1848

©1995 American Physical Society

Authors & Affiliations

Qin-Sheng Zhu and Xiao-Bing Wang

  • Institute of Semiconductors, Academia Sinica, P.O. Box 912, Beijing 100083, People’s Republic of China
  • National Laboratory for Surface Physics, Academia Sinica, Beijing 100083, People’s Republic of China

Quan-Gang Du

  • Institute of Physics, Academia Sinica, P.O. Box 603, Beijing 100083, People’s Republic of China
  • National Laboratory for Surface Physics, Academia Sinica, Beijing 100083, People’s Republic of China

Zhan-Tian Zhong and Yi-Rong Xing

  • Institute of Semiconductors, Academia Sinica, P.O. Box 912, Beijing 100083, People’s Republic of China
  • National Laboratory for Surface Physics, Academia Sinica, Beijing 100083, People’s Republic of China

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Vol. 52, Iss. 3 — 15 July 1995

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