Abstract
The ground-state energy and the binding energy of an exciton in a GaAs/As quantum well under an electric field have been studied, and the interactions between excitons and different phonon modes have been taken into consideration. Numerical calculations show that an electric field brings more obvious interface phonon effects and makes the influence of other phonon modes different compared to those without an electric field.
- Received 27 February 1995
DOI:https://doi.org/10.1103/PhysRevB.52.1776
©1995 American Physical Society