Influence of different phonon modes on the exciton ground-state energy in a quantum well in an electric field

H. J. Xie, C. Y. Chen, and S. D. Liang
Phys. Rev. B 52, 1776 – Published 15 July 1995
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Abstract

The ground-state energy and the binding energy of an exciton in a GaAs/Ga1xAlxAs quantum well under an electric field have been studied, and the interactions between excitons and different phonon modes have been taken into consideration. Numerical calculations show that an electric field brings more obvious interface phonon effects and makes the influence of other phonon modes different compared to those without an electric field.

  • Received 27 February 1995

DOI:https://doi.org/10.1103/PhysRevB.52.1776

©1995 American Physical Society

Authors & Affiliations

H. J. Xie

  • Department of Physics, Guangzhou Teachers’ College, Guangzhou 510400, People’s Republic of China

C. Y. Chen

  • Center of Theoretical Physics, China Center of Advanced Science Technology (World Laboratory), P.O. Box 8730, Beijing 100080, People’s Republic of China
  • Department of Physics, Guangzhou Teachers’ College, Guangzhou 510400, People’s Republic of China

S. D. Liang

  • Department of Physics, Guangzhou Teachers’ College, Guangzhou 510400, People’s Republic of China

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Vol. 52, Iss. 3 — 15 July 1995

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