Free-carrier effects on the excitonic absorption of n-type modulation-doped Zn1xCdxSe/ZnSe multiple quantum wells

L. Calcagnile, R. Rinaldi, P. Prete, C. J. Stevens, R. Cingolani, L. Vanzetti, L. Sorba, and A. Franciosi
Phys. Rev. B 52, 17248 – Published 15 December 1995
PDFExport Citation

Abstract

We investigated the effect of the free-electron density on the heavy-hole exciton transitions in n-type, modulation-doped Zn1xCdxSe/ZnSe multiple quantum wells. Exciton binding energy and oscillator strength were determined from optical-absorption spectra and were found to be strongly influenced by the free-carrier concentration. Complete saturation of the excitonic absorption could be induced at sufficiently high doping levels. Comparison with theoretical predictions suggests that phase-space filling and short-range exchange interactions may account for exciton bleaching. The corresponding critical density was found to increase with Cd content as a consequence of the increasing exciton stability.

  • Received 12 July 1995

DOI:https://doi.org/10.1103/PhysRevB.52.17248

©1995 American Physical Society

Authors & Affiliations

L. Calcagnile, R. Rinaldi, P. Prete, C. J. Stevens, and R. Cingolani

  • Dipartimento di Scienza dei Materiali, Università di Lecce, via Arnesano, I-73100 Lecce, Italy

L. Vanzetti, L. Sorba, and A. Franciosi

  • Laboratorio Tecnologie Avanzate Superfici e Catalisi dell’Istituto Nazionale per la Fisica della Materia, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy

References (Subscription Required)

Click to Expand
Issue

Vol. 52, Iss. 24 — 15 December 1995

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×