Quantum Hall effect in the presence of an antidot potential

Ming Lei, Ningjia Zhu, and Hong Guo
Phys. Rev. B 52, 16784 – Published 15 December 1995
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Abstract

We have computed the Hall resistance of a four-probe quantum dot with an artificial impurity confined inside. As the size of the impurity is increased, transport behavior changes from the usual quantum Hall regime to a regime dominated by strong Aharonov-Bohm (AB) oscillations. We observe directly the formation and coupling of the edge states and their effects on the Hall resistance by varying a magnetic field. For a range of the impurity size, transport enters a crossover regime where quantum Hall and AB effects compete, and a peculiar symmetry between various transmission coefficients leads to a Hall plateau before the quantum Hall regime is reached. This symetry can be explained based on a topological equivalence of the dominating transmission patterns when well-defined edge states are formed.

  • Received 20 July 1995

DOI:https://doi.org/10.1103/PhysRevB.52.16784

©1995 American Physical Society

Authors & Affiliations

Ming Lei, Ningjia Zhu, and Hong Guo

  • Department of Physics and Centre for the Physics of Materials, McGill University, Montréal, Québec, Canada H3A 2T8

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Issue

Vol. 52, Iss. 23 — 15 December 1995

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