Electronic structure of the semimetals Bi and Sb

Yi Liu and Roland E. Allen
Phys. Rev. B 52, 1566 – Published 15 July 1995
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Abstract

We have developed a third-neighbor tight-binding model, with spin-orbit coupling included, to treat the electronic properties of Bi and Sb. This model successfully reproduces the features near the Fermi surface that will be most important in semimetal-semiconductor device structures, including (a) the small overlap of valence and conduction bands, (b) the electron and hole effective masses, and (c) the shapes of the electron and hole Fermi surfaces. The present tight-binding model treats these semimetallic properties quantitatively, and it should, therefore, be useful for calculations of the electronic properties of proposed semimetal-semiconductor systems, including superlattices and resonant-tunneling devices.

  • Received 13 March 1995

DOI:https://doi.org/10.1103/PhysRevB.52.1566

©1995 American Physical Society

Authors & Affiliations

Yi Liu and Roland E. Allen

  • Department of Physics, Texas A&M University, College Station, Texas 77843-4242

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Issue

Vol. 52, Iss. 3 — 15 July 1995

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