Exciton recombination dynamics in InxGa1xAs/GaAs quantum wells

Haiping Yu, Christine Roberts, and Ray Murray
Phys. Rev. B 52, 1493 – Published 15 July 1995
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Abstract

Low-temperature decay times τPL are reported for a series of InxGa1xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4≤Lz≤10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in τPL with increasing In composition (0.05≤x≤0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

  • Received 10 February 1995

DOI:https://doi.org/10.1103/PhysRevB.52.1493

©1995 American Physical Society

Authors & Affiliations

Haiping Yu, Christine Roberts, and Ray Murray

  • Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College, London SW7 2AZ, United Kingdom

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Issue

Vol. 52, Iss. 3 — 15 July 1995

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