Nonresonant carrier transport through high-field domains in semiconductor superlattices

S. H. Kwok, H. T. Grahn, M. Ramsteiner, K. Ploog, F. Prengel, A. Wacker, E. Schöll, S. Murugkar, and R. Merlin
Phys. Rev. B 51, 9943 – Published 15 April 1995
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Abstract

The actual field distribution in superlattices under electric field domain formation is investigated by photoluminescence and Raman spectroscopy. From the measured subband spacings, we determine the magnitude of the field that corresponds to resonant alignment of subbands in adjacent wells. The electron occupation of higher subbands is probed by photoluminescence (PL) measurements. Comparing the results of higher subband PL and the current-voltage characteristics, it is shown that the high-field domain is always nonresonantly coupled with a field strength below the resonance value. The sudden increase in the current when the high-field domain extends over the entire superlattice is explained. Calculations of the field distribution based on a microscopic model support our experimental observations.

  • Received 7 October 1994

DOI:https://doi.org/10.1103/PhysRevB.51.9943

©1995 American Physical Society

Authors & Affiliations

S. H. Kwok, H. T. Grahn, M. Ramsteiner, and K. Ploog

  • Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

F. Prengel, A. Wacker, and E. Schöll

  • Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany

S. Murugkar and R. Merlin

  • The Harrison M. Randall Laboratory of Physics, The University of Michigan, Ann Arbor, Michigan 48109-1120

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Vol. 51, Iss. 15 — 15 April 1995

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