Phonon-mediated asymmetric Fano profiles in a semiconductor quantum well

We predict, on the basis of a model calculation, that an asymmetric Fano-type line shape in the intersubband absorption spectrum will be produced by the electron–LO-phonon interaction in a suitably designed quantum well. The asymmetry parameter q, the broadening Γ, and the frequency shift Δ${\mathrm{\omega }}_{\mathit{p}}$ in the Fano profile are varied with the change of the quantum-well structure parameters, and q is also altered by the variation of the doping density in the well.