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Electron-concentration-dependent quantum-well luminescence: Evidence for a negatively charged exciton

H. Buhmann, L. Mansouri, J. Wang, P. H. Beton, N. Mori, L. Eaves, M. Henini, and M. Potemski
Phys. Rev. B 51, 7969(R) – Published 15 March 1995
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Abstract

The quantum-well electroluminescence of p-i-n GaAs/AlAs double-barrier resonant tunneling diodes has been investigated. The bias-dependent tunability of the resonance conditions for electron and hole tunneling allows for a continuous change of the relative electron and hole concentrations in the quantum well. As the electron concentration is increased, the quantum-well emission line due to heavy-hole free exciton recombination is replaced by a new excitonic line, 2 meV lower in energy. This line is attributed to a negatively charged exciton X. The magnetic field and temperature dependence of the quantum-well emission have been used to characterize this transition.

  • Received 24 January 1995

DOI:https://doi.org/10.1103/PhysRevB.51.7969

©1995 American Physical Society

Authors & Affiliations

H. Buhmann, L. Mansouri, J. Wang, P. H. Beton, N. Mori, L. Eaves, and M. Henini

  • Department of Physics, University of Nottingham, Nottingham NG72RD, United Kingdom

M. Potemski

  • Hochfeld-Magnetlabor, Max Planck Institut für Festkörperforschung,
  • Centre National de la Recherche Scientifique, Boîte Postale 166, 38042 Grenoble, France

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Issue

Vol. 51, Iss. 12 — 15 March 1995

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