Excitonic properties of Zn1xCdxSe/ZnSe strained quantum wells

V. Pellegrini, R. Atanasov, A. Tredicucci, F. Beltram, C. Amzulini, L. Sorba, L. Vanzetti, and A. Franciosi
Phys. Rev. B 51, 5171 – Published 15 February 1995
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Abstract

We present a systematic investigation of the linear optical properties of Zn1xCdxSe/AnSe multiple quantum well structures in the excitonic region using absorption and photoluminescence measurements in the 10–300 K temperature range. Heavy- and light-hole excitonic transitions and heavy-hole exciton binding energies were measured for different well widths and compositions. A set of consistent parameters was determined within a two-band model, which accurately describes the excitonic properties of the strained Zn1xCdxSe quantum wells.

  • Received 23 September 1994

DOI:https://doi.org/10.1103/PhysRevB.51.5171

©1995 American Physical Society

Authors & Affiliations

V. Pellegrini, R. Atanasov, A. Tredicucci, and F. Beltram

  • Scuola Normale Superiore, I-56126 Pisa, Italy

C. Amzulini, L. Sorba, L. Vanzetti, and A. Franciosi

  • Laboratorio Tecnologie Avanzate Superfici e Catalisi dell’Istituto Nazionale di Fisica della Materia, I-34012 Trieste, Italy

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Issue

Vol. 51, Iss. 8 — 15 February 1995

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