Energy gaps in strained In1xGaxAs/In1yGayAszP1z quantum wells grown on (001) InP

R. Weihofen, G. Weiser, Ch. Starck, and R. J. Simes
Phys. Rev. B 51, 4296 – Published 15 February 1995
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Abstract

In1xGaxAs single quantum wells with strain between -2.5% and 1.7% confined by In1yGayAszP1z barriers, lattice matched to InP substrates, have been studied by electroabsorption, photocurrent, and luminescence spectroscopy. The results agree with current models of the strain-induced shift of energy levels and confirm a transition to a type-II superlattice, which for a barrier gap of 1.10 eV takes place for a Ga content near 70% at a tensile strain of 1.7%. The transition is not sharp in the presence of an electric field where confined states are gradually replaced by resonant states. Deep wells of compressively strained samples are not sensitive to a small variation of the position of the conduction band in contrast to wells under tensile strain. The data indicate a negligible shift of the valence band with hydrostatic strain and suggest a valence-band offset for unstrained ternary wells and quaternary barriers between 55% and 60% of the band-gap difference, similar to that of In1xGaxAs/InP heterostructures. Samples with strain larger than 1% become increasingly inhomogeneous resulting in level splitting by thickness variation and strong broadening of the spectral features. Under large tensile strain, luminescence is observed that is attributed to defect luminescence rather than to exciton recombination.

  • Received 5 October 1994

DOI:https://doi.org/10.1103/PhysRevB.51.4296

©1995 American Physical Society

Authors & Affiliations

R. Weihofen and G. Weiser

  • Fachbereich Physik and Zentrum für Materialwissenschaften der Philipps-Universität Marburg, D-35032 Marburg, Germany

Ch. Starck

  • Alcatel Alsthom Recherche, Route de Nozay, F-91460 Marcoussis, France

R. J. Simes

  • Alcatel Optronics, Route de Villejust, F-91625 Nozay Cedex, France

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Issue

Vol. 51, Iss. 7 — 15 February 1995

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