Photoluminescence study of silicon donors in <i>n</i>-type modulation-doped GaAs/AlAs quantum wells

S. T. Lee; A. Petrou; M. Dutta; J. Pamulapati; P. G. Newman; L. P. Fu

doi:10.1103/PhysRevB.51.1942

Photoluminescence study of silicon donors in n-type modulation-doped GaAs/AlAs quantum wells

S. T. Lee, A. Petrou, M. Dutta, J. Pamulapati, P. G. Newman, and L. P. Fu

Phys. Rev. B 51, 1942 – Published 15 January 1995

Abstract

We have studied the photoluminescence spectra from GaAs/AlAs quantum wells doped with silicon donors in the AlAs barriers. The GaAs well width in these structures was chosen so that the lowest conduction subband $e_{1}$ lies above the donor states. An impurity-related feature is identified as the donor-to-valence-band transition. A comparison of the energy of this feature with that of the AlAs X-valley-to-valence-band transition yields the donor binding energy.