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Quenching of excitonic optical transitions by excess electrons in GaAs quantum wells

A.J. Shields, M. Pepper, D.A. Ritchie, M.Y. Simmons, and G.A.C. Jones
Phys. Rev. B 51, 18049(R) – Published 15 June 1995
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Abstract

We study quenching of neutral excitonic optical transitions in GaAs quantum wells with increasing excess electron density. This occurs abruptly at ∼1010 cm2 with the emergence of the negatively charged exciton at lower transition energy. With further increasing density X evolves smoothly into the Fermi-edge singularity. Polarized magneto-optical spectra confirm our assignment.

  • Received 14 April 1995

DOI:https://doi.org/10.1103/PhysRevB.51.18049

©1995 American Physical Society

Authors & Affiliations

A.J. Shields

  • Toshiba Cambridge Research Centre, 260, Science Park, Milton Road, Cambridge CB4 4WE, United Kingdom

M. Pepper

  • Toshiba Cambridge Research Centre, 260, Science Park, Milton Road, Cambridge CB4 4WE, United Kingdom
  • Cavendish Laboratory, University of Cambridge, Madingly Road, Cambridge CB3 0HE, United Kingdom

D.A. Ritchie, M.Y. Simmons, and G.A.C. Jones

  • Cavendish Laboratory, University of Cambridge, Madingly Road, Cambridge CB3 0HE, United Kingdom

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Vol. 51, Iss. 24 — 15 June 1995

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