Optical measurements of electronic band structure in tensile strain (Ga,In)P-(Al,Ga,In)P quantum wells

Martin D. Dawson, Geoffrey Duggan, and D. J. Arent
Phys. Rev. B 51, 17660 – Published 15 June 1995; Erratum Phys. Rev. B 52, 16940 (1995)
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Abstract

Low-temperature (5-K) photoluminescence excitation spectroscopy has been used to identify the principal interband transition energies in a series of tensile strained (Ga,In)P single quantum wells. The structures were of nominally fixed composition but covered a range of well widths from 15 to 120 Å. Fitting of the observed transition energies, using an envelope-function model based on bulk valence-band dispersion calculations that include the interaction with the spin-split-off band, indicates a conduction-band discontinuity ΔEc of ∼0.7ΔEg. This is close to that predicted by a modified model-solid-theory calculation.

  • Received 22 December 1994

DOI:https://doi.org/10.1103/PhysRevB.51.17660

©1995 American Physical Society

Erratum

Authors & Affiliations

Martin D. Dawson and Geoffrey Duggan

  • Sharp Laboratories of Europe, Ltd., Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, United Kingdom

D. J. Arent

  • National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401-3393

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Vol. 51, Iss. 24 — 15 June 1995

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