Abstract
We have prepared a series of thin indium films whose disorder is systematically introduced, and measured the temperature-dependent and magnetic-field-dependent Hall resistance as well as the longitudinal resistance at low temperatures. By increasing the field at fixed disorder, we have found, in addition to a usual critical field where (T→0)→∞, another critical field (≳) where (T→0) diverges. With increasing disorder, decreases faster than , thus the region <B< as the critical disorder is approached. We suggest a possibility that the region <B< corresponds to the Bose-insulator phase.
- Received 9 March 1995
DOI:https://doi.org/10.1103/PhysRevB.51.15415
©1995 American Physical Society