Calculation and photoresponse measurement of the bound-to-continuum infrared absorption in p-type GaAs/AlxGa1xAs quantum wells

Frank Szmulowicz and Gail J. Brown
Phys. Rev. B 51, 13203 – Published 15 May 1995
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Abstract

The bound-to-continuum linear absorption coefficient in p-type GaAs/Al0.3Ga0.7As quantum wells is calculated based on the electronic structure, wave functions, and optical matrix elements obtained from an 8×8 envelope-function approximation calculation and then compared to experimental photoresponse measurements on 30-, 35-, and 40-Å-wide wells. The calculation for the bound and continuum states proceeds independently, owing to the different boundary conditions satisfied by these states. We eschew the use of an artificial large box to confine the continuum wave functions. Good agreement is obtained between experiment and theory with respect to the shape, relative magnitude, and long-wavelength threshold of the bound-to-continuum spectrum for the three measured samples. For an aluminum content of 30%, the calculated linear absorption coefficient for bound-to-continuum absorption in the 8–12-μm window is optimized for the well width of 45 Å due to the presence of a resonant LH2 (second light-hole) state at the top of the well.

  • Received 8 February 1995

DOI:https://doi.org/10.1103/PhysRevB.51.13203

©1995 American Physical Society

Authors & Affiliations

Frank Szmulowicz and Gail J. Brown

  • Wright Laboratory, Materials Directorate, Wright Patterson Air Force Base, Ohio 45433-7707

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Issue

Vol. 51, Iss. 19 — 15 May 1995

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