Zeeman splitting of the excitonic recombination in InxGa1xAs/GaAs single quantum wells

Th. Wimbauer, K. Oettinger, Al. L. Efros, B. K. Meyer, and H. Brugger
Phys. Rev. B 50, 8889 – Published 15 September 1994
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Abstract

We report magnetoluminescence investigations of undoped InxGa1xAs/GaAs single quantum wells. At the highest available magnetic fields (11 T) the excitonic recombination shows well resolved spin splittings. For low indium content the splitting is dominated by the heavy-hole valence-band splitting as confirmed experimentally. The theoretical analysis allows us to determine the electron as well as the heavy-hole g values in InxGa1xAs on GaAs within the composition range 0<x<0.27 for quantum well thickness Lz>120 Å.

  • Received 22 April 1994

DOI:https://doi.org/10.1103/PhysRevB.50.8889

©1994 American Physical Society

Authors & Affiliations

Th. Wimbauer, K. Oettinger, Al. L. Efros, and B. K. Meyer

  • Physikdepartment E16, Technical University of Munich, D-85747 Garching, Germany

H. Brugger

  • Daimler-Benz AG, Research Center Ulm, P.O. Box 2360, D-89013 Ulm, Germany

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Issue

Vol. 50, Iss. 12 — 15 September 1994

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