Fano effect of resonant Raman scattering in a semiconductor quantum well

Kui-juan Jin, Shao-hua Pan, and Guo-zhen Yang
Phys. Rev. B 50, 8584 – Published 15 September 1994
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Abstract

We show that an asymmetric Fano profile in resonant Raman scattering results from the electron–LO-phonon interaction at a particular incident laser wavelength in a quantum well with appropriate structure parameters.

  • Received 12 April 1994

DOI:https://doi.org/10.1103/PhysRevB.50.8584

©1994 American Physical Society

Authors & Affiliations

Kui-juan Jin

  • Institute of Physics, Academia Sinica, P.O. Box 603, Beijing 100080, China

Shao-hua Pan and Guo-zhen Yang

  • China Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080, China
  • Institute of Physics, Academia Sinica, P.O. Box 603, Beijing 100080, China

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Vol. 50, Iss. 12 — 15 September 1994

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