Efficient calculation of the scattering rates in valence-band quantum wells

A. Afzali-Kushaa and G. I. Haddad
Phys. Rev. B 50, 7701 – Published 15 September 1994
PDFExport Citation

Abstract

An effective approach for calculating the (phonon) scattering rate in valence-band quantum wells is presented. The valence-subband structure and the wave functions are obtained using the multiband effective-mass approximation. The subband structure is modeled by piecewise second-order polynomials while its anisotropy is neglected. The effect of the central-cell symmetry is incorporated in the calculation by effectively including the overlap integral in the transition probability given by the Fermi golden rule. For a valence-band quantum well, the relaxation rates due to the polar LO-phonon-, nonpolar LO-phonon-, and LA-phonon-scattering mechanisms at zero temperature are calculated. Due to the higher density of states in valence-band quantum wells, the calculated scattering rates are generally higher than the rates in similar structures based on conduction-band quantum wells.

  • Received 31 May 1994

DOI:https://doi.org/10.1103/PhysRevB.50.7701

©1994 American Physical Society

Authors & Affiliations

A. Afzali-Kushaa and G. I. Haddad

  • Solid-State Electronic Laboratory, Department of Electrical Engineering Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122

References (Subscription Required)

Click to Expand
Issue

Vol. 50, Iss. 11 — 15 September 1994

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×