Second-harmonic response of chemically modified vicinal Si(111) surfaces

U. Emmerichs, C. Meyer, H. J. Bakker, H. Kurz, C. H. Bjorkman, C. E. Shearon, Jr., Y. Ma, T. Yasuda, Z. Jing, G. Lucovsky, and J. L. Whitten
Phys. Rev. B 50, 5506 – Published 15 August 1994
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Abstract

We have studied the optical second-harmonic (SH) response of vicinal Si(111) interfaces, H-terminated or covered with a thermally grown oxide film and subjected to different annealing temperatures. We observed that the rotational anisotropy of the SH signal of a thermally grown oxide film changes after an annealing procedure. We explain this result from a modification of atomic bonding at the steps of the surface. The change in amplitude and phase of the nonlinear-optical response can be well described with an anharmonic oscillator model. We found that the nonlinear-optical signal can be correlated with the electrical quality (density of interface traps) of metal-oxide semiconductor devices produced from these Si/SiO2 structures.

  • Received 26 October 1993

DOI:https://doi.org/10.1103/PhysRevB.50.5506

©1994 American Physical Society

Authors & Affiliations

U. Emmerichs, C. Meyer, H. J. Bakker, and H. Kurz

  • Institute of Semiconductor Electronics II, Rheinisch-Westfälische Technische Hochschule, D-52056 Aachen, Germany

C. H. Bjorkman, C. E. Shearon, Jr., Y. Ma, T. Yasuda, Z. Jing, G. Lucovsky, and J. L. Whitten

  • Departments of Physics and Chemistry, Material Science and Engineering
  • Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202

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Vol. 50, Iss. 8 — 15 August 1994

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