Charge-carrier density and interplane coupling in Y2Ba4Cu7O15: A Cu NMR-NQR study

R. Stern, M. Mali, I. Mangelschots, J. Roos, D. Brinkmann, J.-Y. Genoud, T. Graf, and J. Muller
Phys. Rev. B 50, 426 – Published 1 July 1994
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Abstract

We report an observation of the Cu63,65 nuclear quadrupole resonance (NQR) and nuclear magnetic resonance (NMR) in Y2Ba4Cu7O15. We have measured the temperature dependence of the Cu NQR frequency and spin-lattice relaxation at all four chemically inequivalent Cu sites, and of the Cu magnetic shift at two inequivalent plane Cu sites (for the magnetic field parallel and perpendicular to the c axis). The Y2Ba4Cu7O15 compound turns out to be a structure containing two inequivalent CuO2 planes of differing doping levels, a multilattice in which YBa2Cu4O8 blocks and YBa2Cu3O7 blocks alternate. In the normal conducting state both the static and the dynamic electron spin susceptibilities of the individual planes of a double plane are governed by the same temperature dependence, which shows a behavior typical for an underdoped high-Tc compound. The same temperature dependence means strong coupling between these planes, with the lower limit of the coupling constant not much less than 30 meV. Although the planes are strongly coupled, their spin susceptibilities retain a distinct q dependence. The temperature variation of relaxation rate and Knight shift is described in terms of spin-gap formation or, alternatively, of frustrated phase separation. Below Tc, the common temperature dependence is lost, which could arise from the opening of two superconducting gaps that differ in the individual planes.

  • Received 30 November 1993

DOI:https://doi.org/10.1103/PhysRevB.50.426

©1994 American Physical Society

Authors & Affiliations

R. Stern, M. Mali, I. Mangelschots, J. Roos, and D. Brinkmann

  • Physik-Institut, Universität Zürich, CH-8057 Zürich, Switzerland

J.-Y. Genoud, T. Graf, and J. Muller

  • Département de Physique de la Matière Condensèe, Université de Genève, CH-1211 Genève, Switzerland

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Vol. 50, Iss. 1 — 1 July 1994

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