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Hole delocalization in CdTe/Cd1xZnxTe quantum wells

A. Alexandrou, M. K. Jackson, D. Hulin, N. Magnea, H. Mariette, and Y. Merle d’Aubigné
Phys. Rev. B 50, 2727(R) – Published 15 July 1994
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Abstract

We report on femtosecond pump-probe absorption measurements in CdTe/Cd1xZnxTe quantum wells with an unusual distribution of band offset: almost all the band-gap difference between the two constituent materials is found as a conduction-band offset. We have observed a blueshift of the exciton energy due to hard-core repulsion between excitons and an intriguing redshift in the presence of free electron-hole pairs. We evaluate the redshift due to different mechanisms and conclude that the redshift observed is due to hole delocalization throughout the structure resulting from the very shallow valence-band potential wells.

    DOI:https://doi.org/10.1103/PhysRevB.50.2727

    ©1994 American Physical Society

    Authors & Affiliations

    A. Alexandrou, M. K. Jackson, and D. Hulin

    • Laboratoire d’Optique Appliquée, Ecole Polytechnique-Ecole Nationale Supérieure de Techniques Avancées, Centre de l’Yvette, F-91120 Palaiseau, France

    N. Magnea

    • Département de Recherche Fondamentale sur la Matière Condensée, Commissariat à l’Energie Atomique, F-38041 Grenoble Cedex, France

    H. Mariette and Y. Merle d’Aubigné

    • Laboratoire de Spectrométrie Physique, Université J. Fourier, F-38402 St. Martin d’Hères Cedex, France

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    Issue

    Vol. 50, Iss. 4 — 15 July 1994

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