Donors and excitons in triangular GaAs-Ga1xAlxAs quantum wells

Guang-Zuo Jiang and Cheng-Zhong Wen
Phys. Rev. B 50, 2689 – Published 15 July 1994
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Abstract

We present in this paper a variational calculation for the ground state of the donor and light- and heavy-hole excitons in triangular quantum wells. The binding energy and the lateral and vertical extensions of the wave function are calculated for several well-height values, all as functions of the well width. Compared with a square-well structure or a δ-doped well, the triangular quantum well presents a greater restriction to the donor and exciton. As a result, the lateral and vertical extensions of the ground state are smaller, while the binding energy and the probability inside the well are larger. We conclude in this paper that a triangular quantum-well structure may be significant for theoretical research and practical application.

  • Received 27 December 1993

DOI:https://doi.org/10.1103/PhysRevB.50.2689

©1994 American Physical Society

Authors & Affiliations

Guang-Zuo Jiang and Cheng-Zhong Wen

  • Department of Applied Physics, Southwestern Jiaotong University, Chengdu, People’s Republic of China

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Issue

Vol. 50, Iss. 4 — 15 July 1994

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