Resonant Raman scattering due to bound-carrier spin flip in GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As quantum wells

We study Raman scattering by spin flips of acceptor-bound holes in p-type GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As multiple quantum wells in normal and tilted magnetic fields. It is shown that different mechanisms are responsible for the scattering under excitation in resonance with the following complexes; exciton bound to neutral acceptor (${\mathit{A}}^0$X) and a localized exciton neighboring as a neutral acceptor. It is demonstrated that in the Faraday backscattering geometry the ${\mathit{A}}^0$X-mediated scattering process can be considered as a double spin flip because it includes an acoustic-photon-induced spin flip of an electron in the photocreated ${\mathit{A}}^0$X complex. In tilted magnetic fields an additional satellite line ${\mathit{A}}^0$X’ appears in the Raman spectrum due to the Zeeman interaction of the electron spin with the in-plane field component. The neutral-acceptor and electron g factors are directly measured as a function of the quantum-well width. Two other lines of the ${\mathit{A}}^0$X-related scattering are attributed to the bound-hole interlevel transitions ±3/2→∓1/2, which allow the determination of the interlevel splitting and an analysis of its inhomogeneous broadening induced by fluctuations in the well thickness.