Theoretical calculations of shallow acceptor states in GaAs/AlxGa1xAs quantum wells in the presence of an external magnetic field

Q. X. Zhao, P. O. Holtz, Alfredo Pasquarello, B. Monemar, and M. Willander
Phys. Rev. B 50, 2393 – Published 15 July 1994
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Abstract

Energy levels of ground and excited shallow acceptor states in the presence of an external magnetic field have been calculated for center-doped GaAs/AlxGa1xAs quantum wells (QW’s). The impurity states are calculated within a four-band effective-mass theory, in which the valence-band mixing as well as the mismatch of the band parameters and the dielectric constants between well and barrier materials have been taken into account. The g factors of the shallow acceptor 1s3/2 ground states and the 2p3/2 excited states are obtained for QW’s with different well widths. The infrared optical transitions corresponding to the G, D, and C lines of acceptors in bulk GaAs have also been calculated versus magnetic fields up to 16 T for the case of acceptors confined in QW’s.

  • Received 24 February 1994

DOI:https://doi.org/10.1103/PhysRevB.50.2393

©1994 American Physical Society

Authors & Affiliations

Q. X. Zhao and P. O. Holtz

  • Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden

Alfredo Pasquarello

  • Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA), PHB-Ecublens, CH-1015 Lausanne, Switzerland

B. Monemar and M. Willander

  • Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden

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Vol. 50, Iss. 4 — 15 July 1994

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