Abstract
The carrier-emission processes from quantum wells and from deep-level defects have been identified in deep-level transient spectroscopy (DLTS) measurements. The emissions from quantum wells contribute to a majority carrier peak, from which the valence-band offset Δ at the heterointerface is derived. For /Si, our experimental result Δ=0.24 eV is comparable with the theoretical prediction and previous measurement. The emission of carriers from a high density of interfacial defects gives rise to a minority carrier signal in DLTS, which can be detected only by using an injection pulse with a relatively large pulse width. The partial relaxation of the misfit strain or the nucleation of dislocations may be responsible for the formation of interfacial defects.
- Received 19 September 1994
DOI:https://doi.org/10.1103/PhysRevB.50.18226
©1994 American Physical Society