Interfacial defects in Si1xGex/Si quantum wells detected by deep-level transient spectroscopy

Qinhua Wang, Fang Lu, Dawei Gong, Xiangjun Chen, Jianbao Wang, Henghui Sun, and Xun Wang
Phys. Rev. B 50, 18226 – Published 15 December 1994
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Abstract

The carrier-emission processes from quantum wells and from deep-level defects have been identified in deep-level transient spectroscopy (DLTS) measurements. The emissions from quantum wells contribute to a majority carrier peak, from which the valence-band offset ΔEv at the heterointerface is derived. For Si0.67Ge0.33/Si, our experimental result ΔEv=0.24 eV is comparable with the theoretical prediction and previous measurement. The emission of carriers from a high density of interfacial defects gives rise to a minority carrier signal in DLTS, which can be detected only by using an injection pulse with a relatively large pulse width. The partial relaxation of the misfit strain or the nucleation of dislocations may be responsible for the formation of interfacial defects.

  • Received 19 September 1994

DOI:https://doi.org/10.1103/PhysRevB.50.18226

©1994 American Physical Society

Authors & Affiliations

Qinhua Wang and Fang Lu

  • Fudan T. D. Lee Physics Laboratory, Fudan University, Shanghai, China

Dawei Gong and Xiangjun Chen

  • Surface Physics Laboratory, Fudan University, Shanghai, China

Jianbao Wang, Henghui Sun, and Xun Wang

  • Fudan T. D. Lee Physics Laboratory, Fudan University, Shanghai, China

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Vol. 50, Iss. 24 — 15 December 1994

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