Polaritons in semiconductor multiple-quantum-well structures with Förster-type interwell coupling

Nguyen Ba An and Günter Mahler
Phys. Rev. B 50, 17256 – Published 15 December 1994
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Abstract

When the barrier potential is high enough and/or its thickness large enough resonance tunneling becomes negligible in multiple-quantum-well structures. In this case a possible mechanism to connect the quantum wells is a Förster-type interwell coupling that originates from the long-range electron-hole exchange interaction. We theoretically investigate excitons in such a coupled multiple-quantum-well structure subject to an external light field, and show that the resulting polaritons behave in a qualitatively different way than those in uncoupled quantum-well structures. Of particular interest are interbranch polariton transitions and the redistribution of the radiative damping rate between different polariton branches. Numerical calculations are performed for a CdS-coupled double-quantum-well structure with dephasing by phonons taken into account.

  • Received 18 July 1994

DOI:https://doi.org/10.1103/PhysRevB.50.17256

©1994 American Physical Society

Authors & Affiliations

Nguyen Ba An and Günter Mahler

  • Institut für Theoretische Physik und Synergetik, Universität Stuttgart, Pfaffenwaldring 57/4, 70550 Stuttgart, Germany

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Issue

Vol. 50, Iss. 23 — 15 December 1994

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