Magneto-optical properties in ultrathin InAs-GaAs quantum wells

P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres, I. N. Yassievich, A. Pakhomov, A. Yu. Egovov, P. S. Kop’ev, and V. M. Ustinov
Phys. Rev. B 50, 1604 – Published 15 July 1994
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Abstract

We determined exciton binding energies in monolayer InAs-GaAs quantum wells by studying photoluminescence excitation spectra in a magnetic field up to 8 T. The effective-mass approximation was used to calculate the energy levels and determine the excitonic effects associated with Landau-level transitions and the exciton binding energy, which was also determined by extrapolation of higher-lying Landau-level transition energies to zero field. Both procedures lead to heavy-hole-exciton binding energies of the order of 10 meV, i.e., an enhancement of nearly 300% over bulk GaAs. From the diamagnetic shift of the exciton ground state, an estimate of the light-hole-exciton binding energy is made. In-plane effective mass reversal between heavy-hole- and light-hole-exciton states of submonolayer InAs was also observed. Furthermore, electron (exciton)-phonon coupling was also observed by level anticrossing, involving longitudinal as well as local vibrational phonon modes in ultrathin InAs.

  • Received 12 April 1994

DOI:https://doi.org/10.1103/PhysRevB.50.1604

©1994 American Physical Society

Authors & Affiliations

P. D. Wang, N. N. Ledentsov, and C. M. Sotomayor Torres

  • Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom

I. N. Yassievich, A. Pakhomov, A. Yu. Egovov, P. S. Kop’ev, and V. M. Ustinov

  • A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia

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Issue

Vol. 50, Iss. 3 — 15 July 1994

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