Characterization of effective masses in strained quantum-well laser structures

Valence-band structures and hole effective masses for strained-layer quantum-well laser structures were calculated, using ${\mathrm{In}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$As/InGaAsP material system as an example. A 4×4 strain Hamiltonian with heavy-hole and light-hole band mixing was used in the calculation. Systematic numerical results have been presented for a large range of material parameters and quantum-well widths.