Electronic structure and optical properties of [(ZnSe)m(CdSe)n]N-ZnSe multiple quantum wells

Shang-Fen Ren, Jian-Bai Xia, He-Xiang Han, and Zhao-Ping Wang
Phys. Rev. B 50, 14416 – Published 15 November 1994
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Abstract

The electronic energy bands of (ZnSe)m(CdSe)1 and (ZnSe)m1(Cd0.5Zn0.5Se)2 (m=2,3) superlattices are calculated with the empirical nonlocal pseudopotential method taking into account the strain effect. The energy gaps, effective masses along different directions, the splitting of heavy- and light-hole bands, and spin-orbit splitting, etc. are obtained. Assuming that the (ZnSe)2(CdSe)1 and (ZnSe)3(CdSe)1 superlattices in the corresponding [(ZnSe)m(CdSe)n]N-ZnSe (m=2 or 3, n=1) multiple quantum wells as a whole are one kind of potential-well materials, we calculated the quantum energy levels of the electron and the heavy hole, and the exciton binding energies as functions of period number N of the superlattice. The variations of energy gaps of the two superlattices with temperature are calculated. Taking into account the confined energy in the quantum well and the exciton binding energy, the energy positions of exciton peaks are compared with the luminescence experiments of the multiple quantum wells. The variations with temperature are in good agreement, and the discrepancies between the calculated results and the experimental data are suggested as being due to the interface alloy formation.

  • Received 22 July 1994

DOI:https://doi.org/10.1103/PhysRevB.50.14416

©1994 American Physical Society

Authors & Affiliations

Shang-Fen Ren

  • National Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 10083, China
  • Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

Jian-Bai Xia

  • National Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 10083, China
  • Chinese Center of Advanced Science and Technology (World Laboratory), Beijing, China

He-Xiang Han and Zhao-Ping Wang

  • National Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 10083, China

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Vol. 50, Iss. 19 — 15 November 1994

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