Photocurrent spectroscopy of Zn1xCdxSe/ZnSe quantum wells in p-i-n heterostructures

R. Cingolani, M. Di Dio, M. Lomascolo, R. Rinaldi, P. Prete, L. Vasanelli, L. Vanzetti, F. Bassani, A. Bonanni, L. Sorba, and A. Franciosi
Phys. Rev. B 50, 12179 – Published 15 October 1994
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Abstract

Photocurrent-spectroscopy studies were performed in the 10<T<300 K temperature range on p-i-n heterostructures grown by molecular-beam epitaxy and incorporating Zn1xCdxSe/ZnSe multiple quantum wells (with x=0.10 and 0.25) in the undoped region. The extremely well-resolved excitonic features and corresponding continuum edges allowed us to obtain directly the exciton binding energies and compare the spectra with excitonic transition energies calculated taking into account the effect of strain.

  • Received 18 April 1994

DOI:https://doi.org/10.1103/PhysRevB.50.12179

©1994 American Physical Society

Authors & Affiliations

R. Cingolani, M. Di Dio, M. Lomascolo, R. Rinaldi, P. Prete, and L. Vasanelli

  • Dipartimento di Scienza dei Materiali, Università di Lecce, Via Arnesano, I-73100 Lecce, Italy

L. Vanzetti, F. Bassani, A. Bonanni, L. Sorba, and A. Franciosi

  • Laboratorio Tecnologie Avanzate Superfici e Catilisi del Consorzio Interuniversitario di Fisica della Materia, Area di Ricerca di Trieste, Padriciano 99, I-34012 Trieste, Italy
  • Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455

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Vol. 50, Iss. 16 — 15 October 1994

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