Dynamics and spin relaxation of excitons in GaAs/AlxGa1xAs quantum wells

A. Frommer, Arza Ron, E. Cohen, J. A. Kash, and L. N. Pfeiffer
Phys. Rev. B 50, 11833 – Published 15 October 1994
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Abstract

We present a study of the optical spin orientation and optical alignment relaxation of (e1:hh1)1S excitons in GaAs/Al0.33Ga0.67As narrow quantum wells at low temperatures. The photoluminescence was excited by ps pulses within the (e1:hh1) exciton band and its decay, as well as that of the degrees of the circular and linear polarizations [Pcir(t) and Plin(t)] were measured. The observed decay curves are analyzed by a model based on the in-plane wave-vector (K) dependence of the energy (τa), spin (τcir), and alignment (τlin) relaxation times of delocalized excitons. These were found to vary in the range of 120<τa<230 ps, 50>τcir>30 ps, and 15>τlin>5 ps for 0.019 Å1<K<0.032 Å1. The model fitting is not sensitive to the relaxation times of the K=0 state, which are very long: 1000>τlin0,τcir0>300 ps. We further assume that the hole spin-relaxation rate is much faster than that of the electron. This allows us to estimate the relative contribution of each of these particles’ spin-relaxation rate to τcir and τlin.

  • Received 18 July 1994

DOI:https://doi.org/10.1103/PhysRevB.50.11833

©1994 American Physical Society

Authors & Affiliations

A. Frommer, Arza Ron, and E. Cohen

  • Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel

J. A. Kash

  • IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

L. N. Pfeiffer

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 50, Iss. 16 — 15 October 1994

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