Lateral subband transitions in the luminescence spectra of a one-dimensional electron-hole plasma in In0.53Ga0.47As/InP quantum wires

P. Ils, A. Forchel, K. H. Wang, Ph. Pagnod-Rossiaux, and L. Goldstein
Phys. Rev. B 50, 11746 – Published 15 October 1994
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Abstract

In0.53Ga0.47As/InP quantum wires with widths down to about 10 nm have been investigated by high-excitation luminescence spectroscopy. The one-dimensional electron-hole plasma spectra of quantum wires with widths between 50 and 30 nm exhibit shoulders on the high-energy edge of the emission. With decreasing quantum-wire widths the shoulders shift consistently to higher energy. The low- and high-energy features are identified by model calculations with the first, second, and third lateral-subband transitions in the structures. A simple model based on a square-well confinement by the semiconductor vacuum interface and the measured widths of the structures is in quantitative agreement with the experimental data.

  • Received 23 June 1994

DOI:https://doi.org/10.1103/PhysRevB.50.11746

©1994 American Physical Society

Authors & Affiliations

P. Ils, A. Forchel, and K. H. Wang

  • Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Ph. Pagnod-Rossiaux and L. Goldstein

  • Alcatel-Alsthom Recherche, 91460 Marcoussis, France

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Issue

Vol. 50, Iss. 16 — 15 October 1994

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