Electromodulation spectroscopy of an array of modulation-doped GaAs/Ga1xAlxAs quantum dots: Experiment and theory

Godfrey Gumbs, Danhong Huang, H. Qiang, Fred H. Pollak, P. D. Wang, C. M. Sotomayor Torres, and M. C. Holland
Phys. Rev. B 50, 10962 – Published 15 October 1994
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Abstract

A recent photoreflectance (PR) experiment on a GaAs/Ga1xAlxAs modulation-doped quantum-dot array shows that at 77 K the quasi-two-dimensional ‘‘2C-2H’’ interband transition develops a series of evenly spaced oscillations. Such features are due to the quantization of the energy levels related to the in-plane paraboliclike potential for such reduced-dimensional sytems, e.g., evenly spaced conduction and valence subbands. However, for the other dominant feature, i.e., ‘‘1C-1H’’/‘‘1C-1L,’’ no fine structure is observed since the first electron subband is occupied. We present a self-consistent field theory and numerical calculations for the intersubband absorption coefficient of an array of modulation-doped GaAs/Ga1xAlxAs quantum dots with lateral parabolic confining potentials for electrons and holes. Our numerical results for the derivative of the absorption coefficient have features which are quite similar to those observed in the PR experiment.

  • Received 28 April 1994

DOI:https://doi.org/10.1103/PhysRevB.50.10962

©1994 American Physical Society

Authors & Affiliations

Godfrey Gumbs and Danhong Huang

  • Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, New York 10021

H. Qiang and Fred H. Pollak

  • Department of Physics and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210

P. D. Wang, C. M. Sotomayor Torres, and M. C. Holland

  • Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, University of Glasglow, Glasglow G12 8QQ, Scotland

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Vol. 50, Iss. 15 — 15 October 1994

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