Exciton binding energies in a dielectric quantum well in a magnetic field

J. Cen, R. Chen, and K. K. Bajaj
Phys. Rev. B 50, 10947 – Published 15 October 1994
PDFExport Citation

Abstract

We study the effect of a magnetic field applied along the growth axis on exciton binding energies in dielectric quantum-well structures, in which the dielectric constant of the confining barriers is significantly smaller than that of the well material. The anisotropic electron-hole Coulomb interaction potential is obtained analytically by solving the Poisson equation in the layered geometry of quantum wells. Confinement is provided by the image charge distribution arising from the mismatch of dielectric constants at the interfaces, in addition to that of the quantum-well potential and the applied magnetic field. Exciton binding energies are calculated using the Gaussian-type orbital expansion method. Significantly enhanced binding energies are obtained for the excitons in various dielectric quantum-well structures and their behavior in a magnetic field is discussed.

  • Received 1 July 1994

DOI:https://doi.org/10.1103/PhysRevB.50.10947

©1994 American Physical Society

Authors & Affiliations

J. Cen, R. Chen, and K. K. Bajaj

  • Department of Physics, Emory University, Atlanta, Georgia 30322

References (Subscription Required)

Click to Expand
Issue

Vol. 50, Iss. 15 — 15 October 1994

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×