Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures

J. Zou and D. J. H. Cockayne
Phys. Rev. B 49, 8086 – Published 15 March 1994
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Abstract

The mechanisms whereby 60° misfit dislocations are generated from dissociated threading dislocations in quantum-well heterostructures are considered. The two partial dislocations experience different misfit stresses, resulting in each partial having a different critical thickness. As a consequence, a number of different dislocation configurations are predicted, including the possibility of producing stacking faults of infinite width.

  • Received 26 April 1993

DOI:https://doi.org/10.1103/PhysRevB.49.8086

©1994 American Physical Society

Authors & Affiliations

J. Zou and D. J. H. Cockayne

  • Electron Microscope Unit, The University of Sydney, Sydney, New South Wales 2006, Australia

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Vol. 49, Iss. 12 — 15 March 1994

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