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Fano resonances in the excitation spectra of semiconductor quantum wells

D. Y. Oberli, G. Böhm, G. Weimann, and J. A. Brum
Phys. Rev. B 49, 5757(R) – Published 15 February 1994
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Abstract

Fano resonances are observed in the photoluminescence excitation spectra of GaAs-AlAs quantum wells. They originate from the Coulomb interaction that couples a discrete state and a continuum of excitonic states belonging to different pairs of conduction and valence subbands. This interpretation is supported by our calculations and by the behavior of the excitonic line shape in the presence of a magnetic field applied perpendicular to the layers.

  • Received 1 November 1993

DOI:https://doi.org/10.1103/PhysRevB.49.5757

©1994 American Physical Society

Authors & Affiliations

D. Y. Oberli, G. Böhm, and G. Weimann

  • Walter Schottky Institut, Technische Universität München, D-85748 Garching, Germany

J. A. Brum

  • Instituto de Fisica ‘‘Gleb Wataghin,’’ Universidade Estadual de Campinas, 13086 Campinas, São Paulo, Brazil

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Vol. 49, Iss. 8 — 15 February 1994

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