Abstract
Results of a spot-profile-analysis low-energy-electron-diffraction study of the 3×1 order-disorder phase transition of the Ge(113) and Si(113) surfaces are reported. For Ge(113) agreement with predictions for chiral melting with isotropic scaling is found. For Si(113) we compare our findings to those of other LEED and x-ray-scattering studies.
- Received 20 September 1993
DOI:https://doi.org/10.1103/PhysRevB.49.2706
©1994 American Physical Society
