Abstract
Magnetotransport behavior of two-dimensional X-band electrons created in modulation-doped very thin (25–75 Å) AlAs quantum wells was studied. Effective-mass analysis based on temperature-dependent magnetoresistances clearly showed crossover at an AlAs thickness of about 45 Å. This value is much smaller than that in an AlAs/GaAs type-II superlattice (60 Å). Origins of this difference were discussed in terms of the effect of doping and degeneracy change and of the change of strain due to the structure difference.
- Received 16 August 1993
DOI:https://doi.org/10.1103/PhysRevB.49.2189
©1994 American Physical Society