X-conduction-electron transport in very thin AlAs quantum wells

S. Yamada, K. Maezawa, W. T. Yuen, and R. A. Stradling
Phys. Rev. B 49, 2189 – Published 15 January 1994
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Abstract

Magnetotransport behavior of two-dimensional X-band electrons created in modulation-doped very thin (25–75 Å) AlAs quantum wells was studied. Effective-mass analysis based on temperature-dependent magnetoresistances clearly showed XzXxy crossover at an AlAs thickness of about 45 Å. This value is much smaller than that in an AlAs/GaAs type-II superlattice (60 Å). Origins of this difference were discussed in terms of the effect of doping and degeneracy change and of the change of strain due to the structure difference.

  • Received 16 August 1993

DOI:https://doi.org/10.1103/PhysRevB.49.2189

©1994 American Physical Society

Authors & Affiliations

S. Yamada

  • Nippon Telegraph and Telephone Corporation Basic Research Laboratories, 3-9-11, Midori-cho, Musashino-shi, Tokyo 180, Japan

K. Maezawa

  • Nippon Telegraph and Telephone Corporation LSI Laboratories, 3-1, Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan

W. T. Yuen and R. A. Stradling

  • Department of Physics and Interdisciplinary Research Centre for Semiconductor Materials, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BZ, United Kingdom

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Vol. 49, Iss. 3 — 15 January 1994

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