Localized phonon-assisted cyclotron resonance in GaAs/AlAs quantum wells

J. S. Bhat, B. G. Mulimani, and S. S. Kubakaddi
Phys. Rev. B 49, 16459 – Published 15 June 1994
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Abstract

The theory of phonon-assisted cyclotron resonance in quantum wells is given; we consider cases where electrons are scattered by confined LO phonons described by the Huang and Zhu model, Fuchs-Kliewer slab modes, and Ridley’s guided mode model. The effect of interface phonon modes on cyclotron resonance is also studied. Extra peaks due to transitions between Landau levels accompanied by emission of confined and interface phonons in the absorption spectrum are predicted. Numerical results for frequency, field, and well-width dependence are given for parameters characteristic of GaAs/AlAs quantum wells.

  • Received 10 February 1994

DOI:https://doi.org/10.1103/PhysRevB.49.16459

©1994 American Physical Society

Authors & Affiliations

J. S. Bhat

  • Department of Physics, Sri Dharmasthala Manjunatheshwara College of Engineering, Dharwad 580 002, India

B. G. Mulimani and S. S. Kubakaddi

  • Department of Physics, Karnatak University, Dharwad 580 003, India

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Vol. 49, Iss. 23 — 15 June 1994

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