Tunneling in quantum-wire superlattices with random layer thicknesses

Xiaoshuang Chen, Shijie Xiong, and Guanghou Wang
Phys. Rev. B 49, 14736 – Published 15 May 1994
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Abstract

The electron tunneling of a GaAs/Ga1xAlxAs superlattice with randomly distributed layer thicknesses is studied within the framework of the effective-mass approximation in the Wannier representation. The transfer-matrix method and Landauer formula are used to calculate the electron transmission coefficient and tunneling conductance, respectively. Analytical and numerical calculations are performed for the tunneling conductance with different values of potential barrier (different x for Ga1xAlxAs) and layer thicknesses. The present calculations show that the peak positions of the tunneling conductance are shifted to lower energy as x decreases. The number of peaks can be increased by increasing the layer thicknesses. Therefore, optical and electronic semiconductor devices may be artificially prepared by the proper choice of these parameters for quantum-wire superlattices with random layer thicknesses.

  • Received 14 January 1994

DOI:https://doi.org/10.1103/PhysRevB.49.14736

©1994 American Physical Society

Authors & Affiliations

Xiaoshuang Chen, Shijie Xiong, and Guanghou Wang

  • Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China

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Vol. 49, Iss. 20 — 15 May 1994

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