Abstract
Photoluminescence studies of GaAs/As and As/GaAs quantum-well wires have been performed. The emission from the GaAs wires is dominated by a spatially indirect transition, and the As wires by a direct transition. Detailed time-resolved-photoluminescence studies show a redshift in photoluminescence energy with increasing time delay after excitation for the indirect transition in the GaAs wires, accompanied by a nonexponential decay time which increases with increasing delay. The As wires show no such behavior, with a decay time constant that is independent of time delay after excitation.
- Received 24 February 1994
DOI:https://doi.org/10.1103/PhysRevB.49.11504
©1994 American Physical Society