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Time-resolved photoluminescence of spatially direct and indirect transitions in shallow etched quantum-well wires

P. J. Poole, S. Charbonneau, M. Fritze, and A. V. Nurmikko
Phys. Rev. B 49, 11504(R) – Published 15 April 1994
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Abstract

Photoluminescence studies of GaAs/AlxGa1xAs and InxGa1xAs/GaAs quantum-well wires have been performed. The emission from the GaAs wires is dominated by a spatially indirect transition, and the InxGa1xAs wires by a direct transition. Detailed time-resolved-photoluminescence studies show a redshift in photoluminescence energy with increasing time delay after excitation for the indirect transition in the GaAs wires, accompanied by a nonexponential decay time which increases with increasing delay. The InxGa1xAs wires show no such behavior, with a decay time constant that is independent of time delay after excitation.

  • Received 24 February 1994

DOI:https://doi.org/10.1103/PhysRevB.49.11504

©1994 American Physical Society

Authors & Affiliations

P. J. Poole and S. Charbonneau

  • National Research Council, Ottawa, Ontario, Canada K1A 0R6

M. Fritze and A. V. Nurmikko

  • Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912

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Vol. 49, Iss. 16 — 15 April 1994

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