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Quenching of resonance-induced resistance in double quantum wells in the presence of in-plane magnetic fields

Y. Ohno, H. Sakaki, and M. Tsuchiya
Phys. Rev. B 49, 11492(R) – Published 15 April 1994
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Abstract

Effects of in-plane magnetic fields on the channel resistance of double quantum wells are studied for the case where impurities are introduced only in one of the wells. The resonant increase of the channel resistance caused by the gate-induced resonant coupling of two levels is found to be quenched by an in-plane magnetic field and it is successfully ascribed to the field-induced mixing of the resonantly coupled states.

  • Received 30 March 1994

DOI:https://doi.org/10.1103/PhysRevB.49.11492

©1994 American Physical Society

Authors & Affiliations

Y. Ohno and H. Sakaki

  • Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan

M. Tsuchiya

  • Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

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Vol. 49, Iss. 16 — 15 April 1994

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