Magnetic properties of the S-like bound hole states in GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As quantum wells

We present a combined experimental and theoretical investigation of shallow two-dimensional acceptor states in the presence of an external magnetic field for center-doped GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As quantum wells (QW’s). The calculated 1${\mathit{S}}_{3/2}$(${\mathrm{\Gamma }}_6$)-2${\mathit{S}}_{3/2}$(${\mathrm{\Gamma }}_6$) transition energies of the acceptor state are in excellent agreement with our resonant Raman-scattering data. The g factors obtained from our calculations for varying well width of QW’s are also in good agreement with available experimental data. These results confirm the value of the Luttinger parameter κ=1.2±0.05 for bulk GaAs.