Temperature sensitivity of Auger-recombination effects in compressively strained ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As/${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$${\mathrm{As}}_{1\mathrm{-}\mathit{y}}$${\mathrm{P}}_{\mathit{y}}$ quantum-well lasers

A Monte Carlo analysis of the Auger-recombination effects in compressively strained quantum-well diode lasers covering a wide range of temperature has been carried out. Contrary to the conventional theory where Boltzmann statistics and parabolic band approximations were assumed, in this work, realistic valence-band structure of strained quantum wells and Fermi-Dirac statistics are employed. The results of calculations show that the temperature sensitivity of the Auger-recombination effect, as opposed to that predicted in the conventional theory, is an acute function of all variables considered: strain, carrier density, and temperature. In particular, it is found that under low carrier density levels or high temperature, the temperature sensitivity of the Auger-recombination coefficient in quantum wells is expected to be low regardless of the detailed structures of the valence subbands. Based on a sensitivity analysis of the Auger-recombination effects with respect to the spin-orbit splitting, it is also found that the temperature dependence of the Auger effects discussed in this report should remain valid within a reasonable range of uncertainty in the value of the spin-orbit splitting.