Band-edge properties of a semiconductor alloy: An NMR study of Hg1xCdxTe

Jianhui Shi, Mark Wessels, and Joseph H. Ross, Jr.
Phys. Rev. B 48, 8742 – Published 15 September 1993
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Abstract

We report Hg199 NMR measurements of narrow-gap Hg1xCdxTe alloys in the range x=0.20–0.28. By studying temperature dependences, we have identified intrinsic Knight shifts in these alloys. This provides a measure of Hg orbital contributions to conduction-electron states, and we find a consistently strong average contribution from Hg s orbitals. Furthermore, we identify local variations in the Knight shift with spatial variations in conduction-electron densities and symmetries. These characteristics have been related to randomly populated sites within the alloys. We also discuss Hg199 chemical shifts and their relation to local orbital charges.

  • Received 11 May 1993

DOI:https://doi.org/10.1103/PhysRevB.48.8742

©1993 American Physical Society

Authors & Affiliations

Jianhui Shi, Mark Wessels, and Joseph H. Ross, Jr.

  • Department of Physics, Texas A&M University, College Station, Texas 77843-4242

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Issue

Vol. 48, Iss. 12 — 15 September 1993

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