Effects of image potential on electronic and impurity states in quantum wells

Zhen-Yan Deng and Shi-Wei Gu
Phys. Rev. B 48, 8083 – Published 15 September 1993
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Abstract

The effects of an image potential on the electronic and hydrogenic impurity states in AlAs/GaAs/AlAs quantum wells are calculated by using variational solutions to the effective-mass equation. The results we have obtained show that when the image potential is added the variations of electronic state energy levels and impurity binding energies are significant, especially when the width of the quantum well becomes narrow. The results also show that the effects of the impurity-ion image potential on impurity binding energies are much larger than those of the electron image potential.

  • Received 21 January 1993

DOI:https://doi.org/10.1103/PhysRevB.48.8083

©1993 American Physical Society

Authors & Affiliations

Zhen-Yan Deng

  • Department of Applied Physics and Institute of Condensed Matter Physics, Shanghai Jiao Tong University, Shanghai 200030, People’s Republic of China

Shi-Wei Gu

  • Chinese Centre of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080, People’s Republic of China
  • International Centre for Material Physics, Academia Sinica, Shenyang 110015, People’s Republic of China
  • Department of Applied Physics and Institute of Condensed Matter Physics, Shanghai Jiao Tong University, Shanghai 200030, People’s Republic of China

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Issue

Vol. 48, Iss. 11 — 15 September 1993

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